Super low-distortion and high power hetero GaAs MESFETs with asymmetrical LDD structure

Author

Otobe, K. ; Nakata, K. ; Nakajima, S.

Author_Institution

Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan

fYear

2000

fDate

5-8 Nov. 2000

Firstpage

67

Lastpage

70

Abstract

We have developed hetero GaAs MESFET with an asymmetrical Lightly Doped Drain (LDD) structure to improve the IM3 for base station applications of digital wireless systems. The IM3 at the high and low back-off region was improved simultaneously by optimizing an LDD region. The key points to improve the IM3 are suppressing the impact ionization phenomenon, increasing the gate-drain breakdown voltage and decreasing the on-resistance. The IP3 of 60.5 dBm at high back-off was obtained for 10 W-class FET in class-A operation. A Linearity Figure-of-Merit (L.F.O.M.) of 70.1 was recorded. The PAE of 39.5% at the IM3 of -35 dBc (at low back-off) was obtained for 20 W push-pull FET in class-AB operation.

Keywords

III-V semiconductors; gallium arsenide; impact ionisation; intermodulation distortion; power MESFET; semiconductor device breakdown; 10 W; 20 W; 39.5 percent; GaAs; IM3; asymmetrical LDD structure; base station; breakdown voltage; class-A operation; class-AB operation; digital wireless system; impact ionization; intermodulation distortion; linearity figure of merit; on-resistance; power hetero GaAs MESFET; push-pull FET; Base stations; Degradation; Electrodes; FETs; Gallium arsenide; Impedance; MESFETs; Power generation; Pulse amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 2000. 22nd Annual

Conference_Location

Seattle, WA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5968-2

Type

conf

DOI

10.1109/GAAS.2000.906293

Filename

906293