Title :
Improved InGaAs/InP DHBT technology for 40 Gbit/s optical communication circuits
Author :
Godin, J. ; Riet, M. ; Blayac, S. ; Berdaguer, Ph. ; Benchimol, J.-L. ; Konczykowska, A. ; Kasbari, A. ; Andre, Ph. ; Kauffmann, N.
Author_Institution :
Group. d´Interet Econ., OPTO, Marcoussis, France
Abstract :
Improved technologies and design methodologies are required to address the needs of very high speed ICs for over 40 Gbit/s optical communications. We describe such improvements for our InP DHBT technology, for our design methodology, and show how it results in improved circuit designs.
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; optical communication equipment; 40 Gbit/s; InGaAs-InP; InGaAs/InP DHBT technology; design methodology; high-speed IC; optical communication circuit; Circuits; DH-HEMTs; Design methodology; Frequency; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Predictive models; Semiconductor process modeling; Wavelength division multiplexing;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906296
