DocumentCode
2911911
Title
Forecasting method for HEMT MMIC large-signal RF yield
Author
Tsai, R. ; Chen, Y.C. ; Nishimoto, M. ; Yang, L.W. ; Okamura, W. ; Lai, R.
Author_Institution
TRW Inc., Redondo Beach, CA, USA
fYear
2000
fDate
5-8 Nov. 2000
Firstpage
125
Lastpage
128
Abstract
Accurate MMIC (Monolithic Microwave Integrated Circuits) RF yield forecasting is a critical tool for proactively defusing yield problems and planning efficient use of manufacturing resources. TRW has investigated a method for forecasting the large-signal RF yield of HEMT MMICs that is based on a combination of statistical device modeling through an analytical, physical device model, and an empirical nonlinear device model. Using this hybrid nonlinear statistical device modeling method, we have been able to accurately simulate the variation of large-signal MMIC performance with manufacturing process variation.
Keywords
HEMT integrated circuits; MMIC; integrated circuit modelling; integrated circuit yield; HEMT MMIC; hybrid nonlinear statistical device model; large-signal RF yield; manufacturing process; Analytical models; HEMTs; Integrated circuit yield; MMICs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Predictive models; Radio frequency; Radiofrequency integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location
Seattle, WA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5968-2
Type
conf
DOI
10.1109/GAAS.2000.906307
Filename
906307
Link To Document