An ultra-low DC power ultra-flat multi-octave MHEMT LNA MMIC

Author

Tang, O.S.A. ; Hwang, K.C. ; Chao, P.C. ; Nichols, K. ; MtPleasant, L. ; Schmanski, B. ; Lang, M. ; Duh, K.H.G. ; Smith, P.M. ; Valenti, S. ; Melcher, R. ; Taft, W.

Author_Institution

Sanders, A Lockheed Martin Co., Nashua, NH, USA

fYear

2000

fDate

5-8 Nov. 2000

Firstpage

147

Lastpage

150

Abstract

An ultra-wideband ultra-flat ultra-low DC power consumption low noise amplifier MMIC using metamorphic InAlAs/InGaAs HEMT technology has been developed. The amplifier demonstrated a record 2.7 octave bandwidth of 1.7 to 11 GHz, with a record /spl plusmn/0.6 dB of gain ripple. The associated gain was 16.4 dB and the noise figure varied between 0.84 dB and 1.5 dB. The DC power consumption was only 10 mW. These first pass results represent state-of-the-art performance figures for wideband LNAs.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit noise; low-power electronics; wideband amplifiers; 0.84 to 1.5 dB; 1.7 to 11 GHz; 10 mW; 16.4 dB; InAlAs-InGaAs; InAlAs/InGaAs metamorphic HEMT; gain; gain ripple; low noise amplifier; noise figure; ultra-low DC power ultra-flat multi-octave MHEMT LNA MMIC; wideband amplifier; Bandwidth; Energy consumption; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Low-noise amplifiers; MMICs; Ultra wideband technology; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 2000. 22nd Annual

Conference_Location

Seattle, WA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5968-2

Type

conf

DOI

10.1109/GAAS.2000.906311

Filename

906311