Title :
An ultra-low DC power ultra-flat multi-octave MHEMT LNA MMIC
Author :
Tang, O.S.A. ; Hwang, K.C. ; Chao, P.C. ; Nichols, K. ; MtPleasant, L. ; Schmanski, B. ; Lang, M. ; Duh, K.H.G. ; Smith, P.M. ; Valenti, S. ; Melcher, R. ; Taft, W.
Author_Institution :
Sanders, A Lockheed Martin Co., Nashua, NH, USA
Abstract :
An ultra-wideband ultra-flat ultra-low DC power consumption low noise amplifier MMIC using metamorphic InAlAs/InGaAs HEMT technology has been developed. The amplifier demonstrated a record 2.7 octave bandwidth of 1.7 to 11 GHz, with a record /spl plusmn/0.6 dB of gain ripple. The associated gain was 16.4 dB and the noise figure varied between 0.84 dB and 1.5 dB. The DC power consumption was only 10 mW. These first pass results represent state-of-the-art performance figures for wideband LNAs.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit noise; low-power electronics; wideband amplifiers; 0.84 to 1.5 dB; 1.7 to 11 GHz; 10 mW; 16.4 dB; InAlAs-InGaAs; InAlAs/InGaAs metamorphic HEMT; gain; gain ripple; low noise amplifier; noise figure; ultra-low DC power ultra-flat multi-octave MHEMT LNA MMIC; wideband amplifier; Bandwidth; Energy consumption; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Low-noise amplifiers; MMICs; Ultra wideband technology; mHEMTs;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906311
