Title :
49-GHz preamplifier with a transimpedance gain of 52 dB/spl Omega/ using InP HEMTs
Author :
Shigematsu, H. ; Sato, M. ; Suzuki, T. ; Takahashi, T. ; Imanishi, K. ; Hara, N. ; Ohnishi, H. ; Watanabe, Y.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We developed a new preamplifier with a transimpedance gain of 52 dB/spl Omega/ and 49 GHz bandwidth using 0.15-/spl mu/m InP based high electron mobility transistors (HEMTs). The preamplifier consists of a lumped element designed transimpedance amplifier for an input stage and a distributed amplifier for a gain stage. A highly stabilized and ultra-broad band distributed amplifier with gain-peaking techniques was successfully designed. This technique provides a preamplifier ultra-broad bandwidth and excellent gain flatness.
Keywords :
HEMT circuits; III-V semiconductors; distributed amplifiers; indium compounds; preamplifiers; wideband amplifiers; 0.15 micron; 49 GHz; InP; InP HEMT; distributed amplifier; lumped element amplifier; preamplifier; transimpedance gain; ultrabroad bandwidth; Bandwidth; Circuits; Distributed amplifiers; FETs; Gain; HEMTs; Indium phosphide; MODFETs; Preamplifiers; Wavelength division multiplexing;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906322
