K-band 76% PAE InP double heterojunction bipolar power transistors and a 23 GHz compact linear power amplifier MMIC

Author

Okamura, W. ; Yang, L.W. ; Gutierrez-Aitken, A. ; Kaneshiro, E. ; Lester, J. ; Sawdai, D. ; Grossman, P.C. ; Kobayashi, K. ; Yen, H.C. ; Oki, A. ; Chin, P. ; Block, T.

Author_Institution

TRW Electron. & Technol. Div., Redondo Beach, CA, USA

fYear

2000

fDate

5-8 Nov. 2000

Firstpage

219

Lastpage

222

Abstract

In this paper, we report a DHBT power cell with 76% PAE at 21 GHz, and the first DHBT MMIC PA operating at 22-24 GHz. The MMIC amplifier combines four power cells where each power cell is made up of two 1.5/spl times/30 /spl mu/m/sup 2/ emitter fingers, yielding a total emitter area of 360 /spl mu/m/sup 2/. A practical design approach is employed to yield a single-ended, single stage power amplifier which achieved a record high output power density per chip area of 0.36-0.38 W/mm/sup 2/ at 23 GHz.

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; indium compounds; power bipolar transistors; 23 GHz; 76 percent; InP; InP double heterojunction bipolar power transistor; K-band; MMIC linear power amplifier; output power density; power-added efficiency; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; K-band; MMICs; PHEMTs; Power amplifiers; Power generation; Power transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 2000. 22nd Annual

Conference_Location

Seattle, WA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5968-2

Type

conf

DOI

10.1109/GAAS.2000.906326

Filename

906326