Title :
200 GHz InP/GaAs/sub x/Sb/sub 1-x//InP double heterojunction bipolar transistors
Author :
Bolognesi, C.R. ; Dvorak, M.W. ; Pitts, O. ; Watkins, S.P.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
We report the fabrication and characterization of abrupt junction InP/GaAsSb/InP DHBTs with a current gain cutoff frequency f/sub T/ and a maximum oscillation frequency f/sub MAX/ above 200 GHz with a breakdown voltage BV/sub CEO/>6 V. This level of performance was reached by thinning the base layer to 200 /spl Aring/ and increasing the C-doping level to /spl sim/10/sup 20//cm/sup 3/ while using a 2000 /spl Aring/ thick InP collector layer.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; 200 GHz; 6 V; InP-GaAsSb-InP; InP/GaAs/sub x/Sb/sub 1-x//InP double heterojunction bipolar transistor; abrupt junction; breakdown voltage; current gain cutoff frequency; maximum oscillation frequency; microwave characteristics; Cutoff frequency; Delay; Doping; Double heterojunction bipolar transistors; Electron mobility; Fabrication; Gallium arsenide; Indium phosphide; Performance gain; Physics;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906329
