Title :
An 18 GHz continuous time /spl Sigma/-/spl Delta/ modulator implemented in InP transferred substrate HBT technology
Author :
Jaganathan, S. ; Mensa, D. ; Mathew, T. ; Betser, Y. ; Krishnan, S. ; Wei, Y. ; Scott, D. ; Urteaga, M. ; Rodwell, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report an 18 GHz clock-rate, 2/sup nd/ order continuous-time /spl Sigma/-/spl Delta/ modulator implemented using InP transferred substrate HBTs. Under two-tone test conditions, the modulator achieved 43 dB and 33 dB SNR at signal frequencies of 500 MHz and 990 MHz, respectively. The latter is equivalent in performance to a 1.98 GS/s Nyquist-rate ADC with 6.2 bits resolution. The IC occupied 1.95 mm/sup 2/ die area and dissipated /spl sim/1.5 W.
Keywords :
III-V semiconductors; bipolar integrated circuits; continuous time systems; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; sigma-delta modulation; 1.5 W; 18 GHz; InP; InP transferred substrate HBT IC; SNR; continuous time sigma-delta modulator; two-tone test; Bandwidth; Capacitors; Circuits; Clocks; Delay; Delta modulation; Frequency; Gallium arsenide; Indium phosphide; Noise shaping;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906333
