Title :
High efficiency power amplifier module with novel enhancement-mode heterojunction FETs for wide-band CDMA handsets
Author :
Bito, Yasunori ; Kato, Takehiko ; Kato, Teruhisa ; Iwata, Naoki
Author_Institution :
Div. of Compound Semicond. Device, NEC Corp., Shiga, Japan
Abstract :
A 0.1 cc high efficiency power amplifier multi chip module (MCM) employing novel enhancement-mode double-doped AlGaAs/InGaAs/AlGaAs heterojunction FETs (HJFET) has been successfully developed for 1.9 GHz wide-band CDMA handsets. The HJFET has a 5 nm thickness Al/sub 0.5/Ga/sub 0.5/As barrier layer for improving a gate forward turn-on voltage. It was also optimized with thickness of upper and lower Al/sub 0.2/Ga/sub 0.8/As electron supply layers to obtain a high maximum drain current. Under single 3.5 V operation, the MCM exhibited 26.0 dBm output power, a record 47.2% power-added efficiency and 22.3 dB associated gain with -35.5 dBc adjacent channel leakage power ratio at 5 MHz off-center frequency.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; aluminium compounds; cellular radio; code division multiple access; gallium arsenide; indium compounds; junction gate field effect transistors; multichip modules; power field effect transistors; telephone sets; 1.9 GHz; 22.3 dB; 3.5 V; 47.2 percent; Al/sub 0.2/Ga/sub 0.8/As electron supply layer; Al/sub 0.5/Ga/sub 0.5/As barrier layer; AlGaAs-InGaAs-AlGaAs; cellular phone handset; enhancement-mode double-doped AlGaAs/InGaAs/AlGaAs heterojunction FET; multichip module; power amplifier; wideband CDMA; Broadband amplifiers; Electrons; FETs; Heterojunctions; High power amplifiers; Indium gallium arsenide; Multiaccess communication; Power generation; Telephone sets; Voltage;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906334
