Low DC power, high gain-bandwidth product, coplanar Darlington feedback amplifiers using InAlAs/InGaAs heterojunction bipolar transistors

Author

Delong Cui ; Sawdai, D. ; Shawn Hsu ; Pavlidis, Dimitris

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2000

fDate

5-8 Nov. 2000

Firstpage

259

Lastpage

262

Abstract

Broad band amplifiers with two Darlington feedback topologies, namely resistive biased and mirror biased, have been designed, fabricated and characterized. The HBT layers used for amplifiers were grown by MBE. To reduce the knee voltage and increase the breakdown voltage of the devices, graded base-emitter junction and low-doped, thick collector have been employed. The fabricated amplifiers have achieved 10.95 dB gain with 25.5 GHz bandwidth at DC power consumption of only 34.7 mW. State-of-art Gain-Bandwidth-Products per dc power were achieved for both amplifiers (/spl ges/2.60 GHz/mW). The fabricated amplifiers also demonstrated moderate output power (8.3 dBm) at 10 GHz with a low DC power consumption of only 40 mW.

Keywords

III-V semiconductors; aluminium compounds; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; wideband amplifiers; 10 GHz; 10.95 dB; 25.5 GHz; 34.7 mW; DC power consumption; InAlAs-InGaAs; InAlAs/InGaAs heterojunction bipolar transistor; MBE growth; breakdown voltage; broadband amplifier; coplanar Darlington feedback amplifier; gain-bandwidth product; graded base-emitter junction; knee voltage; low-doped collector; mirror biased topology; output power; resistive biased topology; Bandwidth; Breakdown voltage; Energy consumption; Feedback; Gain; Heterojunction bipolar transistors; Knee; Mirrors; Power amplifiers; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 2000. 22nd Annual

Conference_Location

Seattle, WA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5968-2

Type

conf

DOI

10.1109/GAAS.2000.906335

Filename

906335