Title :
Surface modification of silicon wafer by low-pressure high-frequency plasma chemical vapor deposition method
Author :
Kataoka, H. ; Mungkung, N. ; Yuji, T. ; Kawano, M. ; Kiyota, Y. ; Uesugi, D. ; Nakabayashi, K. ; Suzaki, Y. ; Shibata, H. ; Kashihara, N. ; Sakai, K. ; Bouno, T. ; Akatsuka, H.
Author_Institution :
Dept. of Int. Liberal Arts, Minami Kyushu Junior Coll., Miyazaki, Japan
fDate :
Aug. 30 2010-Sept. 3 2010
Abstract :
The writers are developing the production process device of thin-film material for the flexible solar cells using the high-frequency plasma chemical vapor deposition (CVD) method. In order to clarify the characteristics of the device, plasma treatment is applied on the Si wafer surface and basic characteristic of plasma is found by the analysis of the B doped p-type (100) Si wafer surface using X-ray photoelectron spectroscopy (XPS) and contact angle measuring gauge.
Keywords :
plasma CVD coatings; semiconductor device manufacture; silicon compounds; solar cells; thin film devices; B doped p-type Si wafer surface; X-ray photoelectron spectroscopy; contact angle measuring gauge; low-pressure high-frequency plasma chemical vapor deposition method; plasma treatment; production process device; silicon wafer; solar cells; surface modification; thin-film material; Electrodes; Films; Photovoltaic cells; Plasmas; Silicon; Surface treatment;
Conference_Titel :
Discharges and Electrical Insulation in Vacuum (ISDEIV), 2010 24th International Symposium on
Conference_Location :
Braunschweig
Print_ISBN :
978-1-4244-8367-9
Electronic_ISBN :
1093-2941
DOI :
10.1109/DEIV.2010.5625758
