Title :
Role of the lateral leakage current on amorphous silicon solar cells
Author :
Martins, Rodrigo ; Fortunato, Elvira ; Bicho, Ana ; Lavareda, Guilherme
Author_Institution :
Dept. of Mater. Sci., New Univ. of Lisbon, Monte de Caparica, Portugal
Abstract :
The aim of this work is to interpret the role of the lateral leakage current on the a-Si:H solar cell performances (J-V characteristics, responsivity and the apparent device degradation behaviour), under low illumination conditions
Keywords :
amorphous semiconductors; current density; elemental semiconductors; hydrogen; leakage currents; semiconductor device models; semiconductor device testing; semiconductor doping; silicon; solar cells; J-V characteristics; Si:H; a-Si:H solar cells; amorphous semiconductor; apparent device degradation behaviour; lateral leakage current; low illumination conditions; performances; responsivity; Amorphous silicon; Conductivity; Current density; Degradation; Etching; Laboratories; Leakage current; Lighting; Materials science and technology; Photovoltaic cells;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520029
