Recombination in a-Si:H: results from the standard and defect pool models

Results from numerical calculations of the recombination kinetics in a-Si:H involving either the standard or the defect pool models, including band tail states, are reported. Fermi level, light intensity and temperature dependences of μτ products are investigated. Major features of experimentally observed majority carrier behavior can be described on the basis of the standard model. Photo-quenching of both (μτ)_e and (μτ)_h for Fermi level positions around mid-gap can be reproduced on the basis of the defect pool model. Photo-enhancement and thermal quenching of (μτ)B are associated with a capture cross section of the band tails smaller than the capture cross sections of the dangling-bonds