DocumentCode :
2912907
Title :
Local stress measurements in packaging by Raman spectroscopy
Author :
Chen, Jian ; Chan, Moses ; De Wolf, Ingrid
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2000
fDate :
2000
Firstpage :
159
Lastpage :
162
Abstract :
This paper discusses the application of micro-Raman spectroscopy to measure mechanical stress in microelectronic packages. Examples are given for local stress induced in the silicon chip by solder bumps, stress induced in the chip by bonding to a Cu substrate, and stress induced during thinning of wafers by polishing. Both 1D and 2D results from stress measurements are shown. It is demonstrated that micro-Raman spectroscopy is a very useful tool for the study of packaging induced local mechanical stress and offers a means for verification of finite element simulation results
Keywords :
Raman spectra; assembling; finite element analysis; integrated circuit bonding; integrated circuit interconnections; integrated circuit modelling; integrated circuit packaging; internal stresses; polishing; soldering; stress analysis; stress measurement; Cu; Cu substrate bonding; Raman spectroscopy; Si; finite element simulation; finite element simulation verification; local stress measurements; mechanical stress; micro-Raman spectroscopy; microelectronic packages; packaging; packaging induced local mechanical stress; polishing; process-induced local stress; silicon chip; solder bumps; stress measurements; wafer thinning; Finite element methods; Mechanical variables measurement; Microelectronics; Packaging; Raman scattering; Semiconductor device measurement; Silicon; Spectroscopy; Stress measurement; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference, 2000. (EPTC 2000). Proceedings of 3rd
Print_ISBN :
0-7803-6644-1
Type :
conf
DOI :
10.1109/EPTC.2000.906366
Filename :
906366
Link To Document :
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