Title :
Parametric analysis of a-Si solar cells from current voltage measurements
Author :
Hegedus, Steven S. ; Phillips, J.E.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
A procedure is presented for accurately representing the current voltage (JV) characteristic of a-Si solar cells. The measured JV data is separated into the forward diode current and photocurrent. The forward diode current is characterized to obtain standard diode parameters A, J 0, and R. The AM1.5 photocurrent JL(V) is characterized using the uniform field model to determine the ratio of collection length to thickness Lc/D, flat band potential VB, and total photocurrent JLO. Very good agreement is found between measured and calculated currents from reverse bias to VOC in a variety of cells. We find that degradation of FF under light soaking from 69% to 49% can be explained solely by a decrease in a single parameter LC/D, from 14 to 3. By examining cells with D from 0.2 to 0.6 μm we find that μτ ranges from 2-4×10 -8 cm2/V
Keywords :
Staebler-Wronski effect; amorphous semiconductors; electric current measurement; elemental semiconductors; optical saturable absorption; photoconductivity; silicon; solar cells; voltage measurement; 0.2 to 0.6 mum; AM1.5 photocurrent; Si; a-Si solar cells; collection length to thickness ratio; current voltage measurements; fill factor degradation; flat band potential; forward diode current; light soaking; parametric analysis; photocurrent; reverse bias; uniform field model; Ambient intelligence; Current measurement; Energy conversion; IEC; P-i-n diodes; Photoconductivity; Photovoltaic cells; Photovoltaic systems; Solar power generation; Voltage measurement;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520046
