Abstract :
The following topics are dealt with: nonvolatile memory; RRAM; CMOS integrated circuit; nanowire transistors; random telegraph noise measurement; MISFET; pFET; quantum wire field effect transistor; system-on chip; NMOS; NAND flash memory; SRAM; SOI structure; wafer bonding; and SiGe nMOSFET.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; SRAM chips; nanowires; noise measurement; system-on-chip; wafer bonding; wide band gap semiconductors; CMOS integrated circuit; MISFET; NAND flash memory; NMOS; RRAM; SiGe; nanowire transistors; nonvolatile memory; pFET; quantum wire field effect transistor; random telegraph noise measurement; system-on chip; wafer bonding;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
