DocumentCode
2913315
Title
Experimental study of dielectric window breakdown suppression technology under HPM in vacuum
Author
Hao, Xi-Wei ; Zhang, Guan-Jun ; Huang, Hui-Jun ; Fang, Jin-Yong ; Chen, Chang-Hua ; Huang, Wen-Hua
Author_Institution
State Key Lab. of Electr. Insulation & Power Equip., Xi´´an Jiaotong Univ., Xi´´an, China
fYear
2010
fDate
Aug. 30 2010-Sept. 3 2010
Firstpage
113
Lastpage
116
Abstract
In order to restrain surface breakdown of dielectric window in HPM (High Power Microwave) devices, experimental research of surface breakdown suppression technology for PTFE is performed under an S-band HPM experimental system in this paper. Different suppression technologies are employed, such as surface polishing, surface notching and surface coating technologies, etc. Experimental results show that polishing treatment on dielectric surface can increase surface breakdown threshold. The surface grooves parallel to the direction of electric field can reduce surface breakdown threshold, while the grooves perpendicular to the direction of electric field can suppress surface breakdown, and the effect is influenced by the depth and width of groove. The surface breakdown experiment of TiN coating on PTFE surface is performed, and the results are also discussed. A new machinable ceramic material is proposed, and the main electrical characteristics of which are introduced. This new material will be promising as dielectric window material of HPM devices.
Keywords
microwave devices; polishing; vacuum breakdown; HPM devices; PTFE; dielectric window surface breakdown suppression technology; high-power microwave devices; surface coating; surface notching; surface polishing; vacuum; Coatings; Dielectrics; Electric breakdown; Materials; Surface morphology; Surface treatment; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Discharges and Electrical Insulation in Vacuum (ISDEIV), 2010 24th International Symposium on
Conference_Location
Braunschweig
ISSN
1093-2941
Print_ISBN
978-1-4244-8367-9
Electronic_ISBN
1093-2941
Type
conf
DOI
10.1109/DEIV.2010.5625797
Filename
5625797
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