A new resonant gate drive circuit with centre-tapped transformer

This paper presents a new resonant gate drive circuit for a pair of low side switches with 50% duty cycle or less, which is suitable for variable frequency resonant converter, push-pull converter and so on. A centre-tapped transformer is utilized to boost switches´ gate voltage twice high as Vcc voltage. Charging and discharging the gate input capacitance by a constant current source increases MOSFETs switching transition speed. The theoretical analysis and simulation waveforms are provided. A prototype board working at 1 MHz is built and experimental results are also given