Title :
Improving RBSOA of 10 kV class bipolar devices
Author :
Gao, Yan ; Huang, Alex Q.
Author_Institution :
Dept. of Electr. & Comput. Eng., NC State Univ., Raleigh, NC
Abstract :
Although some effort has been made to develop a 10 kV bipolar device, one of the main challenges to this development is the small RBSOA expected from a 10 kV class device. Based on the good understanding of what exactly determines the RBSOA of a large area bipolar device, in this paper, we stated that a better RBSOA device can be achieved by increase the sustain-mode dynamic avalanche capability of the device. In the punch through case when the device is in sustained mode, an analytical model is also developed based on the concept
Keywords :
power bipolar transistors; power semiconductor switches; 10 kV; RBSOA; analytical model; bipolar devices; high voltage PNP transistor; power switch; punch through case; reverse biased safe operating area; sustain-mode dynamic avalanche; Analytical models; Breakdown voltage; Charge carrier processes; Current density; Doping; Equations; Failure analysis; Impact ionization; Power electronics; Space charge;
Conference_Titel :
Industrial Electronics Society, 2005. IECON 2005. 31st Annual Conference of IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
0-7803-9252-3
DOI :
10.1109/IECON.2005.1568982
