DocumentCode
2913568
Title
Comparison among SiC JFETs at 1 MHz hard-switched DC/DC converter
Author
Abou-Alfotouh, Ahmed M. ; Radun, Arthur V.
Author_Institution
Empirion, Inc., Bridgewater, NJ
fYear
2005
fDate
6-6 Nov. 2005
Abstract
Silicon carbide (SiC) is a wide bandgap semiconductor material that offers performance improvements over Si for power semiconductors. This paper presents the characteristics of experimental SiC JFETs and Schottky diodes. Also, this paper presents a performance comparison among these SiC devices in a 1 MHz hard-switched DC/DC converter. Further, it will identify the limitations of present SiC JFETs
Keywords
DC-DC power convertors; Schottky diodes; junction gate field effect transistors; power semiconductor switches; silicon compounds; wide band gap semiconductors; 1 MHz; Schottky diode; SiC; SiC JFET; hard-switched DC-DC converter; power semiconductor; silicon carbide device; wide bandgap semiconductor material; Admittance; Capacitance; Circuit testing; Electrical resistance measurement; Frequency; JFETs; Power semiconductor devices; Semiconductor materials; Silicon carbide; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 2005. IECON 2005. 31st Annual Conference of IEEE
Conference_Location
Raleigh, NC
Print_ISBN
0-7803-9252-3
Type
conf
DOI
10.1109/IECON.2005.1568984
Filename
1568984
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