Title :
Comparison among SiC JFETs at 1 MHz hard-switched DC/DC converter
Author :
Abou-Alfotouh, Ahmed M. ; Radun, Arthur V.
Author_Institution :
Empirion, Inc., Bridgewater, NJ
Abstract :
Silicon carbide (SiC) is a wide bandgap semiconductor material that offers performance improvements over Si for power semiconductors. This paper presents the characteristics of experimental SiC JFETs and Schottky diodes. Also, this paper presents a performance comparison among these SiC devices in a 1 MHz hard-switched DC/DC converter. Further, it will identify the limitations of present SiC JFETs
Keywords :
DC-DC power convertors; Schottky diodes; junction gate field effect transistors; power semiconductor switches; silicon compounds; wide band gap semiconductors; 1 MHz; Schottky diode; SiC; SiC JFET; hard-switched DC-DC converter; power semiconductor; silicon carbide device; wide bandgap semiconductor material; Admittance; Capacitance; Circuit testing; Electrical resistance measurement; Frequency; JFETs; Power semiconductor devices; Semiconductor materials; Silicon carbide; Wide band gap semiconductors;
Conference_Titel :
Industrial Electronics Society, 2005. IECON 2005. 31st Annual Conference of IEEE
Conference_Location :
Raleigh, NC
Print_ISBN :
0-7803-9252-3
DOI :
10.1109/IECON.2005.1568984
