Title :
A universal method for calculating and extracting the LF and RF noise behavior of nonlinear devices
Author :
Follmann, R. ; Berben, J. ; Kother, D. ; Waldow, P. ; Borkes, J. ; Wolff, I.
Author_Institution :
Inst. fur Mobil, IMST, Lintfort, Germany
Abstract :
In this paper an efficient method for calculating the noise behavior of active devices is described. This method offers a general solution for a large variety of transistor and other devices. The method can easily be implemented in any extraction and simulation software and allows determination of LF as well as RF noise behavior. The functionality is demonstrated on a nonlinear FET model. Furthermore, verifications with HP series IV/ADS are given for different devices.
Keywords :
field effect transistors; semiconductor device models; semiconductor device noise; HP series IV/ADS; LF noise; RF noise; active device; computer simulation; nonlinear FET model; parameter extraction; transistor; Active noise reduction; Circuit noise; Circuit simulation; Equations; Equivalent circuits; FETs; Low-frequency noise; Noise measurement; Radio frequency; Voltage;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906420
