DocumentCode
2914205
Title
New thin film epitaxial polysilicon encapsulation for piezoresistive accelerometers
Author
Partridge, A. ; Rice, A.E. ; Kenny, T.W. ; Lutz, M.
Author_Institution
Dept. of Electr. & Mech. Eng., Stanford Univ., CA, USA
fYear
2001
fDate
25-25 Jan. 2001
Firstpage
54
Lastpage
59
Abstract
This paper reports a new method of thin film encapsulation for surface micromachined sensors using an epitaxially grown polysilicon cap layer. This technique saves die area and enables the sensors to be handled in standard mounting processes such as pick and place and is suitable for injection plastic molding. The ´epipoly´ encapsulation is designed for a lateral piezoresistive accelerometer, but is broadly applicable. This paper presents an analytic model that describes the deflection of the epipoly encapsulation as a function of pressure, thickness, length, shape, standoff height, venting, sealing, and material properties. This model is verified with Finite Element Analysis (FEA) and experiment.
Keywords
accelerometers; elemental semiconductors; encapsulation; finite element analysis; micromachining; microsensors; moulding; piezoresistive devices; semiconductor epitaxial layers; semiconductor thin films; silicon; Si; analytic model; finite element analysis; injection plastic molding; pick and place mounting; piezoresistive accelerometer; surface micromachined sensor; thin film epitaxial polysilicon encapsulation; Accelerometers; Encapsulation; Gaskets; Mechanical sensors; Packaging; Piezoresistance; Plastics; Thin film sensors; Transistors; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on
Conference_Location
Interlaken, Switzerland
ISSN
1084-6999
Print_ISBN
0-7803-5998-4
Type
conf
DOI
10.1109/MEMSYS.2001.906477
Filename
906477
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