• DocumentCode
    2914205
  • Title

    New thin film epitaxial polysilicon encapsulation for piezoresistive accelerometers

  • Author

    Partridge, A. ; Rice, A.E. ; Kenny, T.W. ; Lutz, M.

  • Author_Institution
    Dept. of Electr. & Mech. Eng., Stanford Univ., CA, USA
  • fYear
    2001
  • fDate
    25-25 Jan. 2001
  • Firstpage
    54
  • Lastpage
    59
  • Abstract
    This paper reports a new method of thin film encapsulation for surface micromachined sensors using an epitaxially grown polysilicon cap layer. This technique saves die area and enables the sensors to be handled in standard mounting processes such as pick and place and is suitable for injection plastic molding. The ´epipoly´ encapsulation is designed for a lateral piezoresistive accelerometer, but is broadly applicable. This paper presents an analytic model that describes the deflection of the epipoly encapsulation as a function of pressure, thickness, length, shape, standoff height, venting, sealing, and material properties. This model is verified with Finite Element Analysis (FEA) and experiment.
  • Keywords
    accelerometers; elemental semiconductors; encapsulation; finite element analysis; micromachining; microsensors; moulding; piezoresistive devices; semiconductor epitaxial layers; semiconductor thin films; silicon; Si; analytic model; finite element analysis; injection plastic molding; pick and place mounting; piezoresistive accelerometer; surface micromachined sensor; thin film epitaxial polysilicon encapsulation; Accelerometers; Encapsulation; Gaskets; Mechanical sensors; Packaging; Piezoresistance; Plastics; Thin film sensors; Transistors; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on
  • Conference_Location
    Interlaken, Switzerland
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-5998-4
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2001.906477
  • Filename
    906477