DocumentCode :
2914205
Title :
New thin film epitaxial polysilicon encapsulation for piezoresistive accelerometers
Author :
Partridge, A. ; Rice, A.E. ; Kenny, T.W. ; Lutz, M.
Author_Institution :
Dept. of Electr. & Mech. Eng., Stanford Univ., CA, USA
fYear :
2001
fDate :
25-25 Jan. 2001
Firstpage :
54
Lastpage :
59
Abstract :
This paper reports a new method of thin film encapsulation for surface micromachined sensors using an epitaxially grown polysilicon cap layer. This technique saves die area and enables the sensors to be handled in standard mounting processes such as pick and place and is suitable for injection plastic molding. The ´epipoly´ encapsulation is designed for a lateral piezoresistive accelerometer, but is broadly applicable. This paper presents an analytic model that describes the deflection of the epipoly encapsulation as a function of pressure, thickness, length, shape, standoff height, venting, sealing, and material properties. This model is verified with Finite Element Analysis (FEA) and experiment.
Keywords :
accelerometers; elemental semiconductors; encapsulation; finite element analysis; micromachining; microsensors; moulding; piezoresistive devices; semiconductor epitaxial layers; semiconductor thin films; silicon; Si; analytic model; finite element analysis; injection plastic molding; pick and place mounting; piezoresistive accelerometer; surface micromachined sensor; thin film epitaxial polysilicon encapsulation; Accelerometers; Encapsulation; Gaskets; Mechanical sensors; Packaging; Piezoresistance; Plastics; Thin film sensors; Transistors; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on
Conference_Location :
Interlaken, Switzerland
ISSN :
1084-6999
Print_ISBN :
0-7803-5998-4
Type :
conf
DOI :
10.1109/MEMSYS.2001.906477
Filename :
906477
Link To Document :
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