Title :
Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology
Author :
Dentan, M. ; Abbon, P. ; Borgeaud, P. ; Delagnes, E. ; Fourches, N. ; Lachartre, D. ; Lugiez, F. ; Paul, B. ; Rouger, M. ; Truche, R. ; Blanc, J.P. ; Faynot, O. ; Leroux, C. ; Delevoye-Orsier, E. ; Pelloie, J.L. ; de Pontcharra, J. ; Flament, O. ; Guebhar
Author_Institution :
CEA-DSM-DAPNIA Saclay, Gif-sur-Yvette, France
Abstract :
DMILL technology integrates mixed analog-digital very rad-hard (>10 Mrad and >1014 neutron/cm2) vertical bipolar, 0.8 μm CMOS and 1.2 μm PJFET transistors on SOI substrate. In this paper, after a presentation of the DMILL program goal, we discuss more into details the main technological choices, the main milestones from the R&D to the industrial implementation, and the main results obtained after stabilization of the final process-flow in the MHS foundry
Keywords :
CMOS integrated circuits; bipolar transistors; junction gate field effect transistors; radiation hardening (electronics); silicon-on-insulator; CMOS transistors; CMOS-JFET-bipolar radiation-hard analog-digital SOI technology; DMILL technology; MHS foundry; PJFET transistors; final process-flow; industrial transfer; stabilization; vertical bipolar transitions; Aerospace industry; Analog-digital conversion; CMOS technology; Circuits; Foundries; Large Hadron Collider; Microelectronics; Radiation hardening; Space technology; Springs;
Conference_Titel :
Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5021-9
DOI :
10.1109/NSSMIC.1998.774298
