Title : 
Precise control of small displacements of a stacked piezoelectric actuator by means of layer-by-layer driving
         
        
            Author : 
Kondo, S. ; Yoshimura, S.-I. ; Saito, N. ; Tanioka, K. ; Esashi, M.
         
        
            Author_Institution : 
NHK Sci. & Tech. Res. Labs., Tokyo, Japan
         
        
        
        
        
        
            Abstract : 
This paper describes a stacked (multilayered) piezoelectric (PE) actuator in which both small and large displacements can be generated with a high degree of accuracy. This operation is achieved by driving the individual layers of the multilayered PE actuator. Such multilayered actuators are sandwich-structured, with a thin, (/spl sim/50 /spl mu/m) electrode layer between each pair of thin (/spl sim/100 /spl mu/m) PE-ceramic layers, so driving an individual layer of the stacked PE actuator was difficult. This difficulty was overcome by using polyamide deposition and a YAG-laser process so that each layer had an individual connection to the power supply. Each layer of the present multilayered PE actuator is thus driven by a corresponding pair of electrodes, and each pair of electrodes can be individually controlled.
         
        
            Keywords : 
displacement control; microactuators; piezoceramics; piezoelectric actuators; YAG laser process; ceramic layer; displacement control; electrode pair; layer-by-layer driving; multilayered actuator; polyamide deposition; sandwich structure; stacked piezoelectric actuator; Atomic force microscopy; Ceramics; Displacement control; Electrodes; Feedback circuits; Optical microscopy; Piezoelectric actuators; Piezoelectric films; Power supplies; Wiring;
         
        
        
        
            Conference_Titel : 
Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on
         
        
            Conference_Location : 
Interlaken, Switzerland
         
        
        
            Print_ISBN : 
0-7803-5998-4
         
        
        
            DOI : 
10.1109/MEMSYS.2001.906525