DocumentCode :
2915034
Title :
Single mask, large force, and large displacement electrostatic linear inchworm motors
Author :
Yeh, R. ; Hollar, S. ; Pister, K.S.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear :
2001
fDate :
25-25 Jan. 2001
Firstpage :
260
Lastpage :
264
Abstract :
We have demonstrated a family of large force and large displacement electrostatic linear inchworm motors that can operate with moderate to high voltages. The inchworm motor design decouples actuator force from total travel and allows the use of electrostatic gap-closing actuators to achieve large force and large displacement while consuming low power. A typical inchworm motor measures 3 mm/spl times/1 mm/spl times/50 /spl mu/m and can lift over 130 times its own weight. One motor has achieved a travel of 80 /spl mu/m and a calculated force of 260 /spl mu/N at 33 V. The force density of that motor was 87 /spl mu/N/mm/sup 2/ at 33 V and the energy efficiency was estimated at 8%. Another motor displaced the shuttle at an average velocity of almost 4 mm/s and achieved an estimated power density of 190 W/m/sup 3/. Motors were cycled 23.6 million times for over 13.5 hours without stiction. This family of motors is fabricated on Silicon-on-Insulator wafers using only a single mask.
Keywords :
electrostatic actuators; electrostatic motors; linear motors; low-power electronics; masks; silicon-on-insulator; 33 V; 4 mm/s; 8 percent; MEMS device; SOI wafer; electrostatic gap closing actuator; electrostatic linear inchworm motor; energy efficiency; force density; low power operation; power density; shuttle displacement; single mask fabrication; Computer science; Couplings; Electrostatic actuators; Force sensors; Hydraulic actuators; Micromechanical devices; Thermal engineering; Thermal force; Thermal sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on
Conference_Location :
Interlaken, Switzerland
ISSN :
1084-6999
Print_ISBN :
0-7803-5998-4
Type :
conf
DOI :
10.1109/MEMSYS.2001.906528
Filename :
906528
Link To Document :
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