Title :
Enhanced current gain in SiC power BJTs using surface accumulation layer transistor (SALTran) concept
Author :
Kumar, M. Jagadesh ; Parihar, Vinod
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
Abstract :
SiC bipolar transistors often suffer from poor current gain due to low carrier lifetimes. In this paper, we demonstrate that the current gain of SiC power bipolar transistors can be improved by as large as 100 % by using a novel surface accumulation layer transistor (SALTran) concept in which a reflecting boundary in the emitter reduces the base current. The reasons for the improved current gain are explained based on simulation results.
Keywords :
power bipolar transistors; silicon compounds; wide band gap semiconductors; BJT; SiC; current gain; power bipolar transistors; surface accumulation layer transistor; Bipolar transistors; Charge carrier lifetime; Doping; Electron emission; Magnesium; Photonic band gap; Semiconductor-metal interfaces; Silicon carbide; Temperature; Voltage;
Conference_Titel :
TENCON 2004. 2004 IEEE Region 10 Conference
Print_ISBN :
0-7803-8560-8
DOI :
10.1109/TENCON.2004.1414903
