• DocumentCode
    2916035
  • Title

    Pressure losses in microchannels with bends

  • Author

    Yuk Kwan Lee, S. ; Wong, M. ; Zohar, Y.

  • Author_Institution
    Hong Kong Univ. of Sci. & Technol., Kowloon, China
  • fYear
    2001
  • fDate
    25-25 Jan. 2001
  • Firstpage
    491
  • Lastpage
    494
  • Abstract
    Bends in fluidic systems are necessary features due to design or technology constraints. Bends or curves in a duct always induce flow separation at the walls, which results in additional pressure loss. In this work, this phenomenon is investigated on a microscale. A set of microchannels, 20 /spl mu/m/spl times/1.1 /spl mu/m/spl times/5810 /spl mu/m in dimensions, with a 90/spl deg/-bend at the channel center has been fabricated using standard micromachining techniques. Three bend configurations have been tested: miter, curved, and double-turn. All the microchannels were integrated with pressure microsensors. Argon gas was passed through the microdevices under inlet pressure up to 50 psi, and the mass flow rate was measured for all the devices as a function of the pressure drop. The flow rate through the channel with the miter bend, a single sharp turn at a right angle, was found to be the lowest. Pressure distributions along this microdevice were recorded, showing a pressure jump across the miter bend. The mass flow rate and pressure measurements indicate the existence of flow separation in the microchannels.
  • Keywords
    channel flow; flow separation; microfluidics; microsensors; pressure sensors; Ar; argon gas mass flow rate; curved bend; double-turn bend; duct; flow separation; fluidic system; microchannel; micromachining; miter bend; pressure distribution; pressure loss; pressure microsensor; Design engineering; Ducts; Fluid flow measurement; Fluidic microsystems; Geometry; Microchannel; Microfluidics; Microsensors; Pressure measurement; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on
  • Conference_Location
    Interlaken, Switzerland
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-5998-4
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2001.906586
  • Filename
    906586