Normal-incidence 1.56-μm MQW asymmetric Fabry-Perot modulator (AFPM) for passive picocells

Author

Liu, C.P. ; Seeds, A.J. ; Chadha, J.S. ; Stavrinou, P.N. ; Parry, Guillaume ; Whitehead, M. ; Krysa, Andrey ; Roberts, J.S.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

fYear

2002

fDate

5-8 Nov. 2002

Firstpage

49

Lastpage

52

Abstract

We have fabricated air-bridged modulators with bandwidths exceeding 10-GHz, the highest yet reported for InGaAsP/InGaAsP MQW AFPMs. Third-order intermodulation between the photodetected downlink signal and the modulated uplink signal is characterised for the first time.

Keywords

Fabry-Perot resonators; III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; intermodulation; optical fibre communication; optical losses; picocellular radio; quantum well devices; 1.56 micron; 10 GHz; AFPM; InGaAsP-InGaAsP; InGaAsP/InGaAsP; MQW; air-bridged modulators; asymmetric Fabry-Perot modulator; electroabsorption modulators; insertion loss; modulated uplink signal; optical intensity modulator; passive picocells; photodetected downlink signal; third-order intermodulation; Electrooptic modulation; Fabry-Perot resonators; Gallium compounds; Indium compounds; Intermodulation distortion; Optical fiber communication; Optical losses;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2002. International Topical Meeting on

Print_ISBN

4-88552-187-4

Type

conf

DOI

10.1109/MWP.2002.1158857

Filename

1158857