Electronic-state modulation for better high-frequency response in GaAs nanostructures under hot electron condition

Electronic-state can be modulated by inserting several thin barrier layers inside a quantum well. Small-signal AC mobility can be calculated under electronic-state modulation condition incorporating relevant scattering mechanisms and carrier energy and momentum balance equations. High frequency response characterized by a cutoff frequency at which the small-signal AC mobility drops to 0.707 of its low frequency values is studied here under hot electron condition. Carrier distribution is considered to be heated drifted Fermi-Dirac. Numerical calculations reflect that AC mobility is enhanced significantly on insertion of thin layers inside a quantum well. It is also observed that electronic-state modulation exhibits appreciable enhancement of cutoff frequency reflecting better high frequency response.