A novel double-side CMOS-MEMS post processing for monolithic sensor integration

Author

Sun, Chih-Ming ; Wang, Chuanwei ; Tsai, Ming-Han ; Hsie, Hsieh-Shen ; Fang, Weileun

Author_Institution

Nanoengineering & Microsystem Inst., Hsinchu

fYear

2008

fDate

13-17 Jan. 2008

Firstpage

90

Lastpage

93

Abstract

This study presents a novel double-side CMOS post-process to monolithically integrate various capacitance type CMOS sensors on a single chip. In applications, the pressure sensor and linear accelerometer have been realized and monolithic integrated using the TSMC 2P4M process and the present post-process. The measurement results show that sensitivities (non-linearity) of the pressure sensor and the accelerometer are 12 mV/kPa (4.77%), and 3.9 mV/G (1.06%), respectively. The measurement ranges are 0~10 kPa, and 0.3~6 G, respectively.

Keywords

CMOS integrated circuits; accelerometers; capacitive sensors; microsensors; pressure sensors; TSMC 2P4M process; capacitance type CMOS sensors; double-side CMOS-MEMS post processing; linear accelerometer; monolithic sensor integration; pressure 0 kPa to 10 kPa; pressure sensor; Accelerometers; CMOS process; Capacitance; Chemical sensors; Dielectric substrates; Electrodes; Etching; Gas detectors; Intelligent sensors; Micromechanical devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on

Conference_Location

Tucson, AZ

ISSN

1084-6999

Print_ISBN

978-1-4244-1792-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2008.4443600

Filename

4443600