Title :
A GaAs SONET framer IC for broadband subscriber loop applications
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
An experimental prototype high-speed SONET (Synchronous Optical Network) framer IC designed for possible broadband subscriber loop applications is presented. The experimental prototype IC, implemented in a GaAs enhancement/depletion (E/D) MESFET technology, performs 8:1 multiplexing, 1:8 demultiplexing, byte alignment, and SONET frame detection functions. The chip operates at data rates up to 1.244 Gb/s (SONET STS-24) over a temperature range from -40° to +85°C. The experimental prototype IC contains approximately 4000 transistors, dissipates 2.5 W of power, and has an estimated yield of about 50%. This performance demonstrates the feasibility of using GaAs LSI in broadband subscriber loop applications where high speed, high density, and low temperature sensitivity are required
Keywords :
III-V semiconductors; Schottky gate field effect transistors; broadband networks; field effect integrated circuits; gallium arsenide; large scale integration; optical communication equipment; optical links; subscriber loops; synchronisation; -40 to 85 degC; 1.244 Gbit/s; 2.5 W; GaAs; III-V semiconductors; LSI; MESFET technology; SONET STS-24; SONET frame detection; SONET framer IC; Synchronous Optical Network; broadband subscriber loop; byte alignment; data rates; demultiplexing; depletion mode; enhancement mode; high density; high speed; low temperature sensitivity; multiplexing; temperature range; transistors; Application specific integrated circuits; Gallium arsenide; High speed integrated circuits; MESFET integrated circuits; Optical design; Photonic integrated circuits; Prototypes; SONET; Subscriber loops; Temperature sensors;
Conference_Titel :
Digital Communications, 1990. Electronic Circuits and Systems for Communications. Proceedings, 1990 International Zurich Seminar on
Conference_Location :
Zurich
DOI :
10.1109/DIGCOM.1990.129384
