Title :
Nonlinear distortions and excess noise behavior of fused InGaAs/Si avalanche photodiode
Author :
Kang, Y. ; Mages, P. ; Clawson, A.R. ; Pauchard, A. ; Hummel, S. ; Bitter, M. ; Pan, Z. ; Lo, Y.H. ; Yu, P.K.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
We present measurements results of the two-tone intermodulation distortions in a fused InGaAs/Si avalanche photodiode that has potentially high gain and low excess noise performance.
Keywords :
III-V semiconductors; avalanche photodiodes; elemental semiconductors; gallium arsenide; indium compounds; intermodulation distortion; semiconductor device measurement; semiconductor device noise; silicon; APD; InGaAs-Si; excess noise behavior; fused InGaAs/Si avalanche photodiodes; nonlinear distortion; photodiode gain; two-tone intermodulation distortion; Avalanche photodiodes; Gallium compounds; Indium compounds; Intermodulation distortion; Semiconductor device noise; Silicon;
Conference_Titel :
Microwave Photonics, 2002. International Topical Meeting on
Print_ISBN :
4-88552-187-4
DOI :
10.1109/MWP.2002.1158883
