Title :
Monolithic InGaAs PIN photodetector-GaAs MHEMT amplifier OEIC fabrication and implementation for 28 GHz LMDS applications
Author :
Joshi, Abhay M. ; Wang, Xinde ; Becker, Don ; Mohr, Dan
Author_Institution :
Discovery Semicond. Inc., Ewing, NJ, USA
Abstract :
We have fabricated a monolithic Opto-electronic Integrated Circuit (OEIC) comprising of an InGaAs PIN photodetector and a Common Gate Amplifier (CGA) using Metamorphic High Electron Mobility Transistors (MHEMTs) on 4 inch GaAs substrates. The OEIC shows a gain of 28 dB at 28 GHz with an 8 GHz FWHM.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; microwave photonics; millimetre wave amplifiers; p-i-n photodiodes; photodetectors; preamplifiers; radio access networks; wideband amplifiers; 28 GHz; 28 dB; 4 inch; GaAs; GaAs MHEMT amplifier; GaAs substrates; InGaAs; InGaAs PIN photodetector; LMDS applications; OEIC fabrication; common gate amplifier; metamorphic MHEMT; monolithic OEIC; monolithic implementation; Broadband amplifiers; Gallium compounds; Indium compounds; Integrated optoelectronics; Millimeter wave amplifiers; Photodetectors; p-i-n photodiodes;
Conference_Titel :
Microwave Photonics, 2002. International Topical Meeting on
Print_ISBN :
4-88552-187-4
DOI :
10.1109/MWP.2002.1158885
