DocumentCode :
2917026
Title :
A Polar Modulated CMOS Class-E Amplifier with a Class-F Driver Stage
Author :
Tsou, Wen-An ; Wuen, Wen-Shen ; Wen, Kuei-Ann
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
3
fYear :
2009
fDate :
21-22 Nov. 2009
Firstpage :
658
Lastpage :
661
Abstract :
This work presents a fully integrated polar modulated CMOS class-E amplifier in a 0.18 ¿m CMOS process. The amplifier using the device-stacking topology is implemented with a self-biased control circuit, which allows the stacked device operating as a resistance, for linearizing the AM-AM and AM-PM distortion. The simulation result shows that the AM-PM distortion is reduced from 18 degrees to 3 degrees. The linearized class-E amplifier with the class-F driver stage can provide the maximum power gain of 21 dB, the maximum output power of 17 dBm, and the peak power-added efficiency (PAE) of 30% from the supply voltage of 2 V.
Keywords :
CMOS integrated circuits; amplifiers; AM-AM distortion; AM-PM distortion; CMOS process; class-F driver stage; device-stacking topology; gain 21 dB; linearized class-E amplifier; polar modulated CMOS class-E amplifier; self-biased control circuit; voltage 2 V; CMOS process; CMOS technology; Driver circuits; Inductors; Nonlinear distortion; Phase distortion; Power amplifiers; Power generation; Radiofrequency amplifiers; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Intelligent Information Technology Application, 2009. IITA 2009. Third International Symposium on
Conference_Location :
Nanchang
Print_ISBN :
978-0-7695-3859-4
Type :
conf
DOI :
10.1109/IITA.2009.403
Filename :
5369415
Link To Document :
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