DocumentCode
2917862
Title
The consequences of annealing temperature to optical and electrical properties of ZnO thin film for FET applications
Author
Salina, M. ; Sahdan, M.Z. ; Jusoh, N.F. ; Kadir, R.A. ; Rusop, M.
Author_Institution
Solar Cell Lab., Univ. Teknol. MARA, Shah Alam, Malaysia
fYear
2010
fDate
11-14 April 2010
Firstpage
423
Lastpage
426
Abstract
In this paper, the ZnO thin film has being growth using the TCVD technique. By using glass as a substrate, this thin film being deposited and being annealed at a different temperature. This is done to investigate the consequences of a different annealing temperature to the optical and electrical properties of this thin film. The IV characteristic has been investigated using IV probe measurement system and the optical properties being analyzed by using UV-VIS spectrophotometer. The result shows that the thin film exhibited a very conductive behavior when being annealed at 450°C.
Keywords
Annealing; Conductive films; FETs; Glass; Optical films; Sputtering; Substrates; Temperature; Transistors; Zinc oxide; FET; Thin Film; Zinc Oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location
Kuala Lumpur, Malaysia
Print_ISBN
978-1-4244-6629-0
Type
conf
DOI
10.1109/ICEDSA.2010.5503027
Filename
5503027
Link To Document