Title :
A Simulation based study on C-V characteristics of oxide thickness for NMOS
Author :
Abdul Aziz, A. ; Osman, S.S.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia
Abstract :
This paper report the Capacitance-Voltage (C-V) characterization of gate oxide in the ±10 nm thickness range. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS. To determine the gate oxide thickness, temperature, Asid Hydrocloric (HCl) % concentration and oxidation time are varies during fabrication process. The effect of the oxide thickness on C-V characteristics is presented.
Keywords :
MOS integrated circuits; electronic engineering computing; technology CAD (electronics); ATHENA simulator; ATLAS simulator; NMOS; SILVACO TCAD software; asid hydrocloric concentration; capacitance-voltage characterization; fabrication process; oxidation time; oxide thickness; size -10 nm; size 10 nm; Capacitance; Capacitance-voltage characteristics; Dielectrics and electrical insulation; FETs; Frequency; MOS devices; MOSFET circuits; Power semiconductor switches; Switching circuits; Voltage; Capacitance-Voltage Characteristics; Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET); Oxide Thickness;
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-6629-0
DOI :
10.1109/ICEDSA.2010.5503030
