A Simulation based study on C-V characteristics of oxide thickness for NMOS

Author

Abdul Aziz, A. ; Osman, S.S.

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia

fYear

2010

fDate

11-14 April 2010

Firstpage

404

Lastpage

407

Abstract

This paper report the Capacitance-Voltage (C-V) characterization of gate oxide in the ±10 nm thickness range. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS. To determine the gate oxide thickness, temperature, Asid Hydrocloric (HCl) % concentration and oxidation time are varies during fabrication process. The effect of the oxide thickness on C-V characteristics is presented.

Keywords

MOS integrated circuits; electronic engineering computing; technology CAD (electronics); ATHENA simulator; ATLAS simulator; NMOS; SILVACO TCAD software; asid hydrocloric concentration; capacitance-voltage characterization; fabrication process; oxidation time; oxide thickness; size -10 nm; size 10 nm; Capacitance; Capacitance-voltage characteristics; Dielectrics and electrical insulation; FETs; Frequency; MOS devices; MOSFET circuits; Power semiconductor switches; Switching circuits; Voltage; Capacitance-Voltage Characteristics; Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET); Oxide Thickness;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-6629-0

Type

conf

DOI

10.1109/ICEDSA.2010.5503030

Filename

5503030