Study of gain mechanisms in Al/sub x/Ga/sub 1-x/N in the temperature range of 30 to 300 K

Author

Lam, J.B. ; Bidnyk, S. ; Gainer, G.H. ; Little, B.D. ; Song, J.J. ; Yang, W.

Author_Institution

Dept. of Phys., Oklahoma State Univ., Stillwater, OK, USA

fYear

2000

fDate

7-12 May 2000

Firstpage

33

Lastpage

34

Abstract

Summary form only given. Due to its optical emission wavelength in the near to deep UV, Al/sub x/Ga/sub 1-x/N deserves much attention for its potential UV light-emitting device applications. Stimulated emission (SE) has been reported for AlGaN with Al concentrations up to 26%, however there have been few studies of the emission properties of AlGaN epilayers under high optical excitation. Here we believe we present the first comprehensive temperature dependent study of SE and low-density band-edge spontaneous emission in AlGaN, and determine the gain mechanism responsible for gain. We found that SE in AlGaN is due to electron-hole plasma recombination.

Keywords

III-V semiconductors; aluminium compounds; electron-hole recombination; gallium compounds; semiconductor epitaxial layers; semiconductor plasma; spontaneous emission; stimulated emission; wide band gap semiconductors; 30 to 300 K; Al/sub x/Ga/sub 1-x/N; AlGaN; AlGaN epilayers; UV light-emitting device applications; electron-hole plasma recombination; gain mechanisms; high optical excitation; low-density band-edge spontaneous emission; near to deep UV; optical emission wavelength; stimulated emission; temperature dependent; Fiber lasers; Gallium nitride; Laser excitation; Optical propagation; Optical solitons; Optimized production technology; Plasma temperature; Solids; Stimulated emission; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906691

Filename

906691