Title :
Millimetre-wave InP/InGaAs photo-HBT and its application to a double-stage cascode optoelectronic mixer
Author :
Muller, M. ; Riet, M. ; Fortin, C. ; Withitsoonthorn, S. ; d´Orgeval ; Gonzalez, C.
Author_Institution :
Lab. OPTO+, Alcatel R&I, Marcoussis, France
Abstract :
We present an ultra-high-speed InP/InGaAs bipolar phototransistor (HPT) with a record optical gain cut-off frequency of 110 GHz and an HPT/HBT two-stage cascode upconverting mixer with a conversion gain of 17 dB at 28 GHz, that is also the highest reported for monolithically integrated optoelectronic mixers.
Keywords :
MMIC mixers; circuit simulation; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit measurement; integrated circuit modelling; integrated optoelectronics; microwave photonics; phototransistors; semiconductor device measurement; semiconductor device models; 110 GHz; 17 dB; 28 GHz; InP-InGaAs; InP/InGaAs photo-HBT; conversion gain; double-stage cascode optoelectronic mixers; heterojunction bipolar phototransistors; mm-wave heterojunction bipolar transistors; monolithically integrated optoelectronic mixers; optical gain cut-off frequency; two-stage cascode upconverting mixers; ultra-high-speed HPT; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Integrated circuit design; Integrated circuit measurements; Integrated circuit modeling; Integrated optoelectronics; MMIC mixers; Phototransistors; Semiconductor device modeling;
Conference_Titel :
Microwave Photonics, 2002. International Topical Meeting on
Print_ISBN :
4-88552-187-4
DOI :
10.1109/MWP.2002.1158934
