• DocumentCode
    2918012
  • Title

    HAREM: High aspect ratio etching and metallization

  • Author

    Sarajlic, E. ; Yamahata, C. ; Cordero, M. ; Collard, D. ; Fujita, H.

  • Author_Institution
    Univ. of Tokyo, Tokyo
  • fYear
    2008
  • fDate
    13-17 Jan. 2008
  • Firstpage
    315
  • Lastpage
    318
  • Abstract
    We report a novel bulk micromachining method for the fabrication of high aspect ratio monocrystalline silicon MicroElectroMechanical Systems (MEMS) on a standard silicon wafer. The two-mask process combines double-side etching and metallization to create a micromechanical system with ´insulating walls´ on its backside. The insulating walls ensure a proper electrical insulation between the different actuation and sensing elements situated on either fixed or movable parts of the device. To demonstrate the many potential applications of this simple microfabrication method, we have machined and characterized electrostatically actuated microtweezers with an integrated differential capacitive sensor.
  • Keywords
    capacitive sensors; displacement measurement; electrostatic actuators; elemental semiconductors; etching; insulation; masks; metallisation; micromachining; micromechanical devices; silicon; HAREM; MEMS; Si; actuation elements; bulk micromachining method; displacement. characterization; electrical insulation; electrostatically actuated microtweezers; high aspect ratio etching and metallization; insulating walls; integrated differential capacitive sensor; monocrystalline silicon microelectromechanical systems fabrication; sensing elements; standard silicon wafer; two-mask process; Capacitive sensors; Dielectric materials; Dielectrics and electrical insulation; Etching; Fabrication; Isolation technology; Metallization; Micromechanical devices; Plasma applications; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
  • Conference_Location
    Tucson, AZ
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-1792-6
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2008.4443656
  • Filename
    4443656