DocumentCode :
2918012
Title :
HAREM: High aspect ratio etching and metallization
Author :
Sarajlic, E. ; Yamahata, C. ; Cordero, M. ; Collard, D. ; Fujita, H.
Author_Institution :
Univ. of Tokyo, Tokyo
fYear :
2008
fDate :
13-17 Jan. 2008
Firstpage :
315
Lastpage :
318
Abstract :
We report a novel bulk micromachining method for the fabrication of high aspect ratio monocrystalline silicon MicroElectroMechanical Systems (MEMS) on a standard silicon wafer. The two-mask process combines double-side etching and metallization to create a micromechanical system with ´insulating walls´ on its backside. The insulating walls ensure a proper electrical insulation between the different actuation and sensing elements situated on either fixed or movable parts of the device. To demonstrate the many potential applications of this simple microfabrication method, we have machined and characterized electrostatically actuated microtweezers with an integrated differential capacitive sensor.
Keywords :
capacitive sensors; displacement measurement; electrostatic actuators; elemental semiconductors; etching; insulation; masks; metallisation; micromachining; micromechanical devices; silicon; HAREM; MEMS; Si; actuation elements; bulk micromachining method; displacement. characterization; electrical insulation; electrostatically actuated microtweezers; high aspect ratio etching and metallization; insulating walls; integrated differential capacitive sensor; monocrystalline silicon microelectromechanical systems fabrication; sensing elements; standard silicon wafer; two-mask process; Capacitive sensors; Dielectric materials; Dielectrics and electrical insulation; Etching; Fabrication; Isolation technology; Metallization; Micromechanical devices; Plasma applications; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location :
Tucson, AZ
ISSN :
1084-6999
Print_ISBN :
978-1-4244-1792-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2008.4443656
Filename :
4443656
Link To Document :
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