Title :
A blue resonant cavity light-emitting diode
Author :
Song, Y.-K. ; Diagne, M. ; Zhou, H. ; Nurmikko, A.V. ; Schneider, R.P., Jr.
Author_Institution :
Dept. of Phys., Brown Univ., Providence, RI, USA
Abstract :
Summary form only given. High brightness InGaN quantum well (QW) blue and green light-emitting diodes have become dominant components for display applications at short visible wavelengths, with a large presently existing manufacturing basis. Their excellent radiative efficiency suggests that other device configurations might also be able to take advantage of the fundamentally robust performance of the nitride LEDs. We report the fabrication and study of a simple resonant cavity blue light emitting diode (RCLED), fabricated by enclosing the InGaN/GaN QW light emitting pn-junction within a rudimentary, but effective optical cavity. The cavity was formed by a high reflectivity dielectric DBR mirror (SiO/sub 2/-HfO/sub 2/) and a composite metallic mirror.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; mirrors; optical fabrication; optical resonators; quantum well devices; wide band gap semiconductors; InGaN-GaN; InGaN/GaN QW light emitting pn-junction; SiO/sub 2/-HfO/sub 2/; blue resonant cavity light-emitting diode; composite metallic mirror; fabrication; high reflectivity dielectric DBR mirror; nitride LED; optical cavity; radiative efficiency; simple resonant cavity blue light emitting diode; Brightness; Displays; Gallium nitride; Light emitting diodes; Manufacturing; Mirrors; Optical device fabrication; Resonance; Robustness; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906696
