DocumentCode :
2918402
Title :
A new paradigm for high resolution 3D lithography
Author :
Mosher, L.A. ; Waits, C.M. ; Morgan, B. ; Ghodssi, R.
Author_Institution :
Univ. of Maryland, College Park
fYear :
2008
fDate :
13-17 Jan. 2008
Firstpage :
395
Lastpage :
398
Abstract :
A new gray-scale lithography method and modeling approach are reported, providing a technique for high-resolution 3D micromachining. A double-exposure grayscale technique was developed showing a significant improvement in the vertical resolution compared to single- exposure gray-scale lithography. This technique increased the number of gray-scale height levels from n levels to n levels, which decreased the average step height from 0.19 mum to 0.02 mum. An empirical model was formulated, enabling precise mask designs and investigation of critical fabrication tolerances. One critical tolerance, mask misalignment, has been simulated and characterized using the model to minimize surface roughness.
Keywords :
masks; micromachining; photolithography; surface roughness; double-exposure grayscale technique; empirical model; fabrication tolerance; gray-scale lithography method; high resolution 3D lithography; high-resolution 3D micromachining; mask designs; mask misalignment; surface roughness; Etching; Gray-scale; Intensity modulation; Lithography; Micromechanical devices; Optical device fabrication; Optical diffraction; Optical modulation; Resists; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location :
Tucson, AZ
ISSN :
1084-6999
Print_ISBN :
978-1-4244-1792-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2008.4443676
Filename :
4443676
Link To Document :
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