Title :
Submicron HEMT technology
Author_Institution :
Stuttgart Univ., Germany
Abstract :
This presentation is concerned with devices and circuits based on GaAs substrates. MESFETs, HEMTs and pseudomorphic HEMTs are promising candidates for large scale integration at very high frequencies of operation
Keywords :
gallium arsenide; GaAs; GaAs substrate; MESFET; high frequency operation; large scale integration; pseudomorphic HEMT; submicron HEMT technology;
Conference_Titel :
Advanced Developments in Microelectronic Engineering (Digest No: 1996/235), IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19961241
