Title :
Electrical properties of a-C thin film deposited using methane gas as precursor
Author :
Hussin, H. ; Mohamad, F. ; Hanapiah, S.M.A. ; Muhamad, M. ; Rusop, M.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia
Abstract :
Amorphous carbon (a-C) thin films were deposited on quartz substrate at various temperatures with thermal chemical vapor deposition (CVD) technique using methane gas as precursor. The deposited a-C thin films were characterized by Current Voltage (I-V) Measurement and UV-VIS-NIR Spectrophotometer. In this experiment, the pyrolysis process was successful to analyse the electrical and optical properties of a-C thin films deposited by thermal CVD using methane gas. The a-C films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, the resistivity is lower and thus gives the conductivity of a-C thin films increased due to the relation between the resistivity and conductivity are inversely proportional.
Keywords :
amorphous semiconductors; carbon; chemical vapour deposition; electrical conductivity; electrical resistivity; elemental semiconductors; infrared spectra; pyrolysis; semiconductor growth; semiconductor thin films; spectrophotometers; ultraviolet spectra; visible spectra; UV-VIS-NIR spectrophotometer; a-C thin film; amorphous carbon thin films; conductivity; current voltage measurement; methane gas; pyrolysis; quartz substrate; resistivity; thermal CVD; thermal chemical vapor deposition; Amorphous materials; Chemical elements; Conductivity; Furnaces; Optical films; Plasma temperature; Sputtering; Substrates; Thin film devices; Transistors; Amorphous carbon; methane gas; thermal CVD; thin films;
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-6629-0
DOI :
10.1109/ICEDSA.2010.5503055
