Title :
MIOS memory devices and their charge storage properties
Author :
Alabdulqader, Hussein Ali ; Abdulkarim, Samah
Author_Institution :
Coll. of Eng. & Archit., Univ. of Nizwa, Nizwa, Oman
Abstract :
The charge storage of the nonvolatile Metal Insulator Oxide Semiconductor (MIOS) memory devices was studied and investigated using an efficient programming and measuring equipments in order to characterize the MIOS performances. Positive and negative voltages are applied to a device fabricated on a different semiconductor substrate. The time duration for these applied voltages is varied and controlled by a computer. The memorization phenomena of these devices due to flat band voltage shift was observed and studied.
Keywords :
MIS devices; random-access storage; MIOS memory devices; charge storage properties; flat band voltage shift; nonvolatile metal insulator oxide semiconductor memory devices; semiconductor substrate; Aluminum; Annealing; Capacitance-voltage characteristics; Channel bank filters; Current measurement; EPROM; Nonvolatile memory; Silicon; Substrates; Voltage; EEPROM; MIOS; Nonvolatile memory; erasing; programming window; writing;
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-6629-0
DOI :
10.1109/ICEDSA.2010.5503056
