Title :
Electrically-pumped Si-laser using nano-particle-modified metal-oxide-Si structures
Author :
Lin, Ching-Fuh ; Liang, Eih-Zhe ; Huang, Chu-Ting ; Lin, Kung-An ; Shu, Shiu-Jia
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Measurement on the carrier lifetime shows that the radiative-recombination rate in Si can be enhanced to be more than twice of the non-radiative-recombination rate at large injection current using the nano-particle modified metal-oxide-silicon (MOS) structure. With the enhanced radiative recombination, the device with such a MOS structure exhibits lasing behaviours under forward bias of current injection at room-temperature and cw operation. The laser has the threshold current of 56 mA. The lasing wavelength well corresponds to the Si indirect-bandgap energy.
Keywords :
MIS structures; carrier lifetime; nanoparticles; semiconductor lasers; silicon; 56 mA; carrier lifetime measurement; cw operation; electrically-pumped Si-laser; forward bias; nano-particle-modified metal-oxide-Si structure; radiative-recombination rate; Charge carrier lifetime; Frequency response; Nanostructures; Photonic band gap; Pump lasers; Radiative recombination; Semiconductor lasers; Silicon; Spontaneous emission; Stimulated emission;
Conference_Titel :
Industrial Electronics Society, 2005. IECON 2005. 31st Annual Conference of IEEE
Print_ISBN :
0-7803-9252-3
DOI :
10.1109/IECON.2005.1569277
