Measurement and evaluation for interface thermal resistance of metal-dielectric layers

Author

Chien, H.C. ; Yao, D.J.

Author_Institution

Ind. Technol. Res. Inst., Hsinchu

fYear

2008

fDate

13-17 Jan. 2008

Firstpage

451

Lastpage

454

Abstract

In this article, we present a sandwiched structure for measuring interface thermal resistance of metal-dielectric layers. Common used metal thin films in MEMS including chromium, nickel, aluminum, titanium, and platinum, were sandwiched in between two SiO₂ layers. Measurement results showed the interface thermal resistance of metal/dielectric layers were narrowly distributed over the range of 2.5~3.8times10^-8 m²K/W. A continuum two-fluid model was served to verify our measurement data and also provided some reasonable physical insight into heat flow across interface.

Keywords

aluminium; chromium; dielectric thin films; heat transfer; micromechanical devices; nickel; platinum; silicon compounds; thermal resistance measurement; titanium; MEMS; SiO₂-Cr-Ni-Al-Ti-Pt-SiO₂; aluminum; chromium; continuum two-fluid model; heat flow; interface thermal resistance; metal thin films; metal-dielectric layers; nickel; platinum; titanium; Aluminum; Chromium; Dielectric measurements; Dielectric thin films; Electrical resistance measurement; Fluid flow measurement; Micromechanical devices; Nickel; Thermal resistance; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on

Conference_Location

Tucson, AZ

ISSN

1084-6999

Print_ISBN

978-1-4244-1792-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2008.4443690

Filename

4443690