Measurement and evaluation for interface thermal resistance of metal-dielectric layers

In this article, we present a sandwiched structure for measuring interface thermal resistance of metal-dielectric layers. Common used metal thin films in MEMS including chromium, nickel, aluminum, titanium, and platinum, were sandwiched in between two SiO₂ layers. Measurement results showed the interface thermal resistance of metal/dielectric layers were narrowly distributed over the range of 2.5~3.8times10^-8 m²K/W. A continuum two-fluid model was served to verify our measurement data and also provided some reasonable physical insight into heat flow across interface.