Title :
High-power optically pumped GaInSb/InAs quantum well lasers with GaInAsSb integrated absorber layers emitting at 4 /spl mu/m
Author :
Choi, H.K. ; Goyal, A.K. ; Buchter, S.C. ; Turner, G.W. ; Manfra, M.J. ; Calawa, S.D.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Summary form only given. We believe we report the first demonstration of high-power GaInSb-InAs type-II QW lasers incorporating GaInAsSb absorber layers. To ensure good carrier transport from the absorber layers to the active wells, the absorber layers were inserted between each active well region.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; infrared sources; laser transitions; optical pumping; optical saturable absorption; quantum well lasers; 4 mum; GaInAsSb absorber layers; GaInAsSb integrated absorber layers; GaInSb-InAs; GaInSb/InAs quantum well lasers; absorber layers; active well region; active wells; good carrier transport; high-power; high-power GaInSb-InAs type-II QW lasers; optically pumped; Diode lasers; Integrated optics; Laser beams; Laser excitation; Optical pumping; Pump lasers; Quantum well lasers; Resonance; Semiconductor laser arrays; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906728
