CMOS-MEMS probes for reconfigurable IC’s

Author

Liu, J. ; Noman, M. ; Bain, J.A. ; Schlesinger, T.E. ; Fedder, G.K.

Author_Institution

Carnegie Mellon Univ., Pittsburgh

fYear

2008

fDate

13-17 Jan. 2008

Firstpage

515

Lastpage

518

Abstract

We report on our progress on the development of CMOS-MEMS electrothermal conductive probes for memory-intensive self-configuring integrated circuits (MISCICs). The MISCIC vision is to use MEMS conductive probes to reconfigure circuits by mechanically addressing and passing current through resistance change vias embedded within the chip circuitry. Cantilevered probes are designed with 1, 4, 9, 16 and 25 mum² areas that are plated with nickel. The vertical range of the electrothermal actuator is 23.9 mum with 3.7 mW heating power, but the range is reduced when in contact with a gold-coated glass slide due to thermal effects. Probe contact to gold varies from 10-50 Omega for multiple make and break cycles with 1 mum² tips.

Keywords

CMOS integrated circuits; cantilevers; electrical contacts; gold; micromechanical devices; nickel; probes; CMOS-MEMS probes; cantilevered probes; electrical contact; electrothermal actuator; electrothermal conductive probes; gold-coated glass slide; memory-intensive self-configuring integrated circuits; nickel plating; power 3.7 mW; reconfigurable IC; resistance 10 ohm to 50 ohm; thermal effects; Actuators; CMOS integrated circuits; Contacts; Electrothermal effects; Etching; Gold; Micromechanical devices; Nickel; Probes; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on

Conference_Location

Tucson, AZ

ISSN

1084-6999

Print_ISBN

978-1-4244-1792-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2008.4443706

Filename

4443706