DocumentCode :
2918929
Title :
Silicon carbide radiation detector for harsh environments
Author :
Metzger, S. ; Henschel, H. ; Köhn, O. ; Lennartz, W.
Author_Institution :
Fraunhofer-INT, Euskirchen, Germany
fYear :
2001
fDate :
10-14 Sept. 2001
Firstpage :
51
Lastpage :
56
Abstract :
We used commercial off the shelf (COTS) silicon carbide (SiC) ultraviolet photodiodes for measuring gamma dose rates at high temperature. We tested them with Co-60 gamma dose rates between 0.03 mGy(Air)/s and 3 Gy(Air)/s. The diodes show excellent sensitivity, high signal to noise ratio, and good linearity. They had been operated at temperatures up to 200°C with negligible changes of the dark and the radiation induced current. Gamma irradiation up to a total dose of 1080 kGy(Air), 32 MeV proton irradiations up to a fluence of 8.5 × 1012 cm-2, and 14 MeV neutron irradiations up to 4.1 × 1012 cm-2 demonstrate their radiation hardness. These results and the ability to measure the proton as well as the neutron dose rate after a calibration with Co-60 gammas show that COTS SiC diodes can be used as radiation detectors in harsh environments.
Keywords :
gamma-ray detection; neutron detection; photodiodes; proton detection; radiation hardening (electronics); semiconductor counters; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 1080 kGy; 14 MeV; 200 degC; 32 MeV; SiC; SiC radiation detector; gamma dose rates measurement; gamma irradiation; harsh environments; high signal to noise ratio; linearity; neutron irradiations; proton irradiations; sensitivity; ultraviolet photodiodes; Diodes; Linearity; Neutrons; Photodiodes; Protons; Radiation detectors; Signal to noise ratio; Silicon carbide; Temperature sensors; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
Type :
conf
DOI :
10.1109/RADECS.2001.1159258
Filename :
1159258
Link To Document :
بازگشت