Title :
60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs
Author :
Simoen, Eddy ; Hermans, Jeroen ; Mercha, Abdelkarim ; Vereecken, Wim ; Vermoere, Carl ; Claeys, Cor ; Augendre, Emmanuel ; Badenes, Gonçal ; Mohammadzadeh, Ali
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The impact of 60 MeV proton irradiation on the static device parameters of CMOS transistors fabricated in a 0.18 μm technology is reported and studied as a function of the polysilicon gate length Lpoly. In addition, the role of the gate dielectric in the radiation response of the threshold voltage, the transconductance, the subthreshold swing, the series resistance and the gate-induced drain leakage (GIDL) current is investigated. For certain parameters, an anomalous length dependence has been observed. Furthermore, a stronger degradation is found for the transistors with an NO-annealed gate dielectric compared with a standard thermal gate oxide. Combining the charge separation technique with the GIDL current, additional insight in the damage mechanisms is gained. It is shown that there is evidence for electron trapping close to the drain in the case of the NO devices.
Keywords :
MOSFET; annealing; electron traps; leakage currents; proton effects; semiconductor device measurement; 0.18 micron; 60 MeV; CMOS transistors; GIDL current; NO; annealing; charge separation technique; damage mechanism; electron trapping; gate dielectric role; gate-induced drain leakage current; polysilicon gate length; proton irradiation effects; series resistance; standard-oxide deep submicron MOSFETs; static device parameters; subthreshold swing; threshold voltage; transconductance; CMOS technology; Dielectric substrates; MOSFETs; Oxidation; Protons; Silicon; Thermal degradation; Threshold voltage; Transconductance; Tunneling;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159260